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These high power devices are designed to dissipate power in R.f.Circuits when mounted to an appropriate heat sink. The terminations provide a low VSWR under maximum power condition. RoHS conformity with the requirements of environmental protection.
Material
Substrate: AlN ceramic |
Cover: Alumina ceramic |
Resistive element: Thick film |
Terminal tensile: Copper Sn (Ag Au) |
Mounting flange: Copper of planting nickel |
TECHNICAL SPECIFICATIONS
Resistance value: 50Ω |
Resistance tolerance:±2% |
Frequency: DC-3GHz |
VSWR:1.15:1 |
Work temperature: -55~ 125℃ |